A Novel Thermal Protection Circuit Based on Bandgap Voltage Reference

摘要

A novel thermal protection circuit based on a bandgap voltage reference is presented in this paper. Simulation was carried out using Cadence Spectre, based on a 0.25 μm CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, which indicated that the thermal protection temperature threshold is approximately 130 ℃. It was also found that the hyteresis is nearly 20 ℃ in all types of process corners, and the designed bandgap reference voltage is 1.205 V with a temperature coefficient of 12.84 ppm/℃.