首页> 外文会议>2019 Electron Devices Technology and Manufacturing Conference >Extending the roadmap beyond 3nm through system scaling boosters: A case study on Buried Power Rail and Backside Power Delivery
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Extending the roadmap beyond 3nm through system scaling boosters: A case study on Buried Power Rail and Backside Power Delivery

机译:通过系统扩展助推器将路线图扩展到3nm以上:以埋入式电源导轨和背面供电为例

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摘要

To ensure continuity in technology scaling, system level technology boosters will need to be introduced to complement Design-Technology Co-Optimization. We illustrate this evolution with the introduction of buried power rails and backside power delivery. These can provide 20% and 30% area scaling benefit respectively. Backside power delivery further improves IR drop providing up to 15% performance enhancement enabling PPAC scaling at system level.
机译:为了确保技术扩展的连续性,将需要引入系统级技术增强器来补充设计技术协同优化。我们通过引入埋入式电源轨和背面电源来说明这种演变。这些可以分别提供20%和30%的面积缩放优势。背面供电进一步改善了IR压降,提供了高达15%的性能增强,可在系统级进行PPAC扩展。

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