Centre for Micro-/Nano-electronics (NOVITAS),School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;
Centre for Micro-/Nano-electronics (NOVITAS),School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;
Temasek Laboratories @NTU, Nanyang Technological University, 637553, Singapore;
Centre for Micro-/Nano-electronics (NOVITAS),School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;
Aluminum nitride; III-V semiconductor materials; Surface morphology; HEMTs; MODFETs; Buffer layers; Substrates;
机译:蓝宝石上的AlGaN / AlN / GaN / AlN双异质结构高电子迁移率晶体管(DH-HEMT)的直流和射频特性
机译:使用AlN / GaN / AlN量子阱和〜(15)N同位素对AlN上的应变GaN通道进行双光学标记拉曼表征
机译:AlN / GaN / AlN双异质结场效应晶体管在应变量子阱中的二维电子气
机译:PA-MBE对AlN / GaN / AlN量子阱中AlN / GaN / AlN量子孔的rence优化
机译:用于开发AlN / SiC {lcub} p / pn {rcub}异质结紫外检测器的MOCVD优化和AlN表征。
机译:表面钝化对超薄AlN / GaN异质结构场效应晶体管中AlN势垒应力和散射机理的影响
机译:应变GaN沟道的双光学标记拉曼表征 alN使用alN / GaN / alN量子阱和15N同位素