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机译:使用AlN / GaN / AlN量子阱和〜(15)N同位素对AlN上的应变GaN通道进行双光学标记拉曼表征
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA,Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint Petersburg 194021, Russia;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
机译:应变GaN / AlN量子点的线性和非线性光学吸收系数和折射率变化
机译:通过拉曼散射在GaN / AlN多量子盘纳米柱中观察到的光子的局限性
机译:从AlN纳米线中的分子束外延生长的GaN-量子磁盘量量化横向电力优势260nm发射:综合光学和形态学特性
机译:带有GaN / AlN量子阱的脊形波导中子带间跃迁引起的全光调制的特性
机译:用于开发AlN / SiC {lcub} p / pn {rcub}异质结紫外检测器的MOCVD优化和AlN表征。
机译:X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
机译:应变GaN沟道的双光学标记拉曼表征 alN使用alN / GaN / alN量子阱和15N同位素
机译:Zincblende GaN和GaN / alN结构的mBE生长和表征