Analysis on Fully Depleted Negative Capacitance Field-Effect Transistor (NCFET) Based on Electrostatic Potential Difference

摘要

Negative capacitance (NC) has been utilized for steep switching devices. For an accurate anticipation of a device operation, it is needed to understand the mechanism of NC effect in NC-based metal-oxide-semiconductor field-effect transistors (MOSFETs); NCFETs. In this work, NC effect of ferroelectric gate stack has been studied in an aspect of potential change by using technology computer-aided design (TCAD) simulation. In addition, a significance of determining appropriate ferroelectric layer thickness is discussed with the help of transfer characteristics.