Structural, Optical and Electrical Properties of Cd_xZn_(1-x)Se Films

摘要

Thin films of cadmium zinc selenide have been deposited at room temperature by the pulse plating technique using ZnSO_4, CdSO_4 and SeO_2 at room temperature and a deposition potential of - 0.9V. The duty cycle was varied in the range of 6 -50 %. X-ray diffraction studies indicate the formation of cubic structure. The band gap increases from 1.72eV for CdSe films to 2.70eV for ZnSe films as the concentration of ZnSe increases. AFM studies indicated that the average grain size increases from 30 nm to 125 nm with increasing concentration of Zn.The values of the resistivity decreases from 10000 ohm cm to 100 ohm cm for the films deposited at a duty cycle of 50 % as the concentration of CdSe increases.