CHARACTERIZATION AND METROLOGY OF NOVEL MATERIALS INVOLVED IN ADVANCED CMOS PROCESSES

摘要

This paper reviews some of the most difficult challenges in the field of metrology and characterization of thin films for advanced microelectronic devices. Metrology issues of ultra thin silicon oxynitride gate dielectrics are presented. As new materials like high κ or low κ materials are or will be required in the near future, their introduction in the manufacturing process of integrated circuits needs new characterization and metrology tools to characterize their physical properties in order to understand their interaction as a function of the various processing steps.