DESIGN, FABRICATION AND EVALUATION OF HIGH PERFORMANCE DIAMOND-BASED POWER DIODES

摘要

In this study, we have designed, fabricated and characterized PECVD (plasma-enhanced chemical vapor deposition) diamond-based Schottky diodes for high power applications. We have elaborated four critical issues in the synthetic-diamond semiconductor technology: growth, doping, Schottky contact, and structural design in order to achieve better performance parameters. Fabricated devices with optimum parameters and processes have shown 500 V of breakdown voltage and 100 A/cm~2 of current density. These values are among the highest reported with the polycrystalline diamond-based devices.