Performance and reliability improvement of 905 nm high power laser diode by design, fabrication and characterization of high damage threshold mirrors

摘要

The performance improvement of 905 nm InGaAs/AlGaAs/GaAs Single Quantum Well Separate-Confinement Heterostructure Laser Diode (SQW-SCH-LD) in consequence of three-step procedure for facet passivation and protection was demonstrated. Initially, processed InGaAs/AlGaAs/GaAs SQW-SCH LD wafer was scribed and cleaved in ambient atmosphere. Secondly, the air-exposed bar facets were cleaned and impurities were removed with Ar + irradiation and bombardment. Finally, after simulation, mirrors consist of single-layer Al2O3 as Low-Reflection (LR) and multilayer vertical bar(Al2O3/Si)(4)vertical bar as High-Reflection (HR) coatings were deposited on front and back facets, respectively. Mirror's surface and interface properties were investigated by UV-Vis-NIR Spectroscopy, Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), Burn-in test, Life-time test and Thermography. Spectrophotometer results of coated mirrors were in appropriate adaptation with the simulation results. High magnification FESEM images reveal the precise repeatability stacked Al2O3/Si 8-layers with amorphous structure on GaAs substrate. Thermographic image of front facet after life-time reveals that front mirror retains initial quality. In the case of coated front mirror and in Continues-Wave laser mode, laser induce damage threshold (LIDT) improved and increased up to 45.75 kW/cm(2). Improvement in mirror coating process results in enhancement laser reliability and operational parameters such as increasing output power and power efficiency, decreasing degradation rate without any catastrophic optical mirror damage.