MODELLING END-OF-THE-ROADMAP TRANSISTORS

摘要

In this paper we present a methodology for statistical 3D simulation of end-of-the-roadmap decananometre and nanometre scale transistors. The numerical simulation approach is based on the recently advanced density gradient formalism and captures both quantum confinement and source-to-drain tunnelling. We use our 'atomistic' device simulator to study intrinsic parameter fluctuations introduced by random discrete dopants, stray charges, oxide thickness fluctuation and line edge roughness in conventional and double gate MOSFETs. We show, for example, that in such devices the magnitude of the threshold voltage fluctuations will reach levels comparable with the expected threshold and supply voltages near the end of the Roadmap.