ALUMINIUM OXIDE THIN FILMS GROWN BY LOW PRESSURE MOCVD USING ALUMINIUM ACETYLACETONATE AND NITROUS OXIDE

摘要

We report the growth and characterization of alumina thin films on Si(100), fused quartz, and TiN/WC substrates in the range of 450-1100℃ by metalorganic chemical vapour deposition, using aluminium acetylacetonate and nitrous oxide as precursors. Films were characterized by X-ray diffractometry, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. As deposited, the films are polycrystalline and strongly adherent to the various substrates. Those grown at lower temperatures are smooth and reflective, and contain less carbon than those grown at higher temperature, which are grainy. The difference in composition and microstructure between films grown in Ar and in N_2O/Ar ambients, and the effect of heteroatoms (mainly carbon) on the dielectric properties of alumina are presented.