MECHANISM OF OXYGEN CONTAMINATION IN PECVD A-SI:H FILMS

摘要

A high-purity hydrogenated amorphous silicon film has been successfully deposited using an advanced PECVD system. Oxygen concentration in the film was as low as 1.4 x l0~(17) atoms/cm~3, i.e., several hundredths of the typical value, and it was characterized as a function of film deposition rate and outgas rate from the reaction chamber. The results suggest that oxygen in the film comes predominantly from H_2O out-gassing from the chamber wall.