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Challenging the Electrodeposition of Multinary Semiconductor Compounds: Case of CuInSe_2

机译:挑战多元半导体化合物的电沉积:CuInSe_2的情况

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The electrodeposition of multinary compounds is of key importance for future technologies. Cu-In-Se system represents a case example, with a great potential in the field of photovoltaics. At IRDEP we achieved efficiencies up to 11.5% based on electrodeposited Cu-In-Se material. In the present paper, nucleation and growth steps of CuInSe_2 are studied by polarization, impedance spectroscopy and SEM. The bulk composition is measured by x-ray fluorescence. The chemical environment of Cu, Se and In and the surface composition are analysed by XPS. A quasi-instantaneous 3D nucleation is observed. Binary Cu-Se nuclei are first obtained, which induce the incorporation of indium leading to CuInSe_2. With increasing growth, secondary phases and Se(0) are obtained. At the threshold of potential corresponding to indium incorporation, a blocking adsorbate is formed, which is reduced at higher cathodic overvoltage into Cu-In-Se compound. These results are discussed in terms of general behavior of multinary compound deposition.
机译:多元化合物的电沉积对于未来技术至关重要。 Cu-In-Se系统代表了一个实例,在光伏领域具有巨大的潜力。在IRDEP,基于电沉积Cu-In-Se材料,我们的效率高达11.5%。本文通过极化,阻抗谱和扫描电镜研究了CuInSe_2的成核和生长步骤。总体组成通过X射线荧光测量。用XPS分析了Cu,Se和In的化学环境和表面组成。观察到准瞬时3D成核。首先获得了二元Cu-Se核,它诱导了铟的掺入,从而导致CuInSe_2。随着增长的增加,获得了第二相和Se(0)。在对应于铟掺入的电势阈值处,形成了阻挡吸附物,该阻挡物在较高的阴极过电压下被还原成Cu-In-Se化合物。根据多元化合物沉积的一般行为讨论了这些结果。

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