On the Depth Profiling of the Traps in MOSFET's with High-K Gate Dielectrics

摘要

A general and reliable model for charge pumping (CP) proposed recently has been extended to trap depth distributions towards oxides depth. The fundamental features concerning the energy and depth region probed at the Si-SiO_2 interface and in the direction of oxides depth are presented in the case of the different basic CP curves. The effect of the electric field is accounted for and its impact on the results is discussed. Then, MOSFET's with HfO_2 gate dielectric are studied. Trap depth concentration profiles recorded from devices after different technological processes are presented and discussed.