Electrical characterization of multilayered thin film integral passive devices

摘要

Current high performance multichip microelectronic packaging requires high density interconnects (>50 /spl mu/m interconnect lines and spaces), integral passive devices (those embedded within the package), and multilayering technologies. The University of Arkansas High Density Electronics Center (HiDEC) and Sheldahl Inc., have developed a high density interconnect adhesiveless metallized film substrate technology for these high performance microelectronic packaging applications. The development of multilayered thin film integral passive devices on polyimide substrates for high frequency applications (<500 MHz) is required in the electronics packaging industry. Factors driving the passive integration technology are overall system miniaturization and higher operating frequencies. With the increasing demands for miniaturization in electronic packaging, the need for miniaturization of passive devices is evident and the precise characterization of these devices is extremely important in application development. This paper describes the design considerations required for producing multilayered passive devices and the frequency dependent characteristics of multilayered resistors, capacitors, inductors, and tuned circuits. Results indicate that this new multilayered integral passives technology has the potential for denser packaging, higher reliability, lower cost, and future replacement of many surface mount devices.