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Preparation of low-k porous silica film incorporated with ethylene groups

机译:掺有乙烯基的低k多孔二氧化硅膜的制备

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We have demonstrated an Alkylen group incorporated porous silica film prepared by using hydrolysis and condensation of BIS(Triethoxysilyl)Ethelene (BTE). BTE and H_2O contained with HCl as a catalyst were mixture with organic solvent, 2-Methylpentane-2,4-diol (MPD). FT-IR peaks due to MPD were not observed but Si-C_2H_4-Si related peaks were still observed in the film even after 450℃ vacuum annealing. Electric characteristics were evaluated with an MOS structure. K value was not depended on the annealing temperature below 400℃, however, it was reduced down to 1.9 at 450℃.
机译:我们已经证明了通过使用BIS(三乙氧基甲硅烷基)乙烯(BTE)的水解和缩合制备的掺有烷基的多孔二氧化硅膜。将含有HCl作为催化剂的BTE和H_2O与有机溶剂2-甲基戊烷-2,4-二醇(MPD)混合。即使在450℃真空退火后,仍未观察到由于MPD引起的FT-IR峰,但仍观察到了Si-C_2H_4-Si相关峰。用MOS结构评估电特性。 K值不取决于400℃以下的退火温度,但是在450℃时K值降低到1.9。

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