首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Temperature Dependence of Porogen Desorption from Low-k Porous Silica Films Incorporated with Ethylene Groups
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Temperature Dependence of Porogen Desorption from Low-k Porous Silica Films Incorporated with Ethylene Groups

机译:含乙烯基的低k多孔二氧化硅膜中孔隙解吸温度的温度依赖性

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摘要

The temperature dependence of porogen desorption from low-k silica films incorporated with ethylene groups was investigated. Total-reflection X-ray measurement indicated that porogen desorption characteristics strongly depended on temperature and time. The time required for film annealing at 400℃ was 3 h, while that required for film annealing at 375℃ was 8 h. These results were confirmed by temperature desorbing spectra measurement. The film vacuum annealed at 375℃ for 8h did not show that the peaks came from porogen.
机译:研究了与亚乙基结合的低k二氧化硅薄膜中成孔剂解吸的温度依赖性。全反射X射线测量表明,成孔剂的解吸特性强烈依赖于温度和时间。 400℃下进行薄膜退火所需的时间为3小时,而375℃下进行薄膜退火所需的时间为8小时。这些结果通过温度解吸光谱测量得到证实。薄膜在375℃下真空退火8h并未显示出峰来自致孔剂。

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