Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute Troy, New York 12180;
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute Troy, New York 12180;
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute Troy, New York 12180;
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute Troy, New York 12180;
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute Troy, New York 12180;
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute Troy, New York 12180;
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Insti;
机译:采用200 GHz SiGe HBT技术实现的低功耗ka波段压控振荡器
机译:利用高速GaInP / GaAs HBT的35-40 GHz单片VCO
机译:基于InAlAs / InGaAs HBT和单片集成光波导的14 GHz MMIC振荡器的光学控制
机译:GaAs HBT工艺中实现的具有0.25-20 GHz倍频/分频范围的高带宽压控振荡器(VCO)
机译:CMOS技术中低相位噪声压控振荡器(VCO)的比较研究。
机译:具有动态分频器的60GHz推挽式InGap HBT VCO