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Influence of Ring Length on Electric Field Distribution in CdZnTe Frisch-ring Detector

机译:环长对CdZnTe弗里施环探测器中电场分布的影响

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The CdZnTe (CZT) devices with various screening depth in dimensions 3 × 3 × 6mm~3 were fabricated. The influence of Ring length (screening depth) and length of crystal on the electric field distribution in CZT devices has been explored by finite element method. The results indicated that ring length (screening depth) plays an important role on the detecting performance of CZT Frisch-ring devices. Longer screening depth gives rise to an electric field which is compressed more greatly. Measured spectra indicated that extreme compressed electric field could reduce detecting resolution. A FWHM energy resolution of approximately 3.71% at 662 keV was obtained for a device with dimensions 3 × 3 × 6mm~3 and 4.8mm screening depth.
机译:制造了尺寸为3×3×6mm〜3的各种屏蔽深度的CdZnTe(CZT)器件。通过有限元方法研究了环长(屏蔽深度)和晶体长度对CZT器件中电场分布的影响。结果表明,环长(屏蔽深度)对CZT Frisch环器件的检测性能起着重要作用。较长的屏蔽深度会产生电场,该电场会被更大程度地压缩。实测光谱表明,极端压缩电场会降低检测分辨率。对于尺寸为3×3×6mm〜3且屏蔽深度为4.8mm的器件,在662 keV时获得的FWHM能量分辨率约为3.71%。

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