The control of the frequency of the sub-terahertz source on the semiconductor superlattices for biophysical applications with use the change of the doping density

摘要

In the paper we study the possibility to control the frequency of the sub-THz source, based on the semiconductor superlattice by means of optimal spatial distribution of the doping density. We propose the appropriate mathematical model, which allows to describe the collective transport of charge in miniband semiconductor, where the spatial profile of the equilibrium charge density is denned by function. As the example we consider the uniform spatial distribution of doping density, contained local inhomogeneity, caused by local increase of density and described approximately by Gaussian function. We show that such inhomogeneity being placed in different areas of the transport region can affect the dynamics of charge domain, which, in turn, leads to increase (or decrease) of the frequency of current oscillations.