Effect of the Form and Localization of Doping Density Perturbations on the Current Characteristics in a Semiconductor Superlattice

摘要

The effect doping density perturbations have on the current characteristics in a semiconductor superlattice is studied. The current characteristics are shown to depend on the localization and form of the perturbation. The effect of perturbations is strongest near the superlattice emitter. The effect grows along with the density profile integral and depends weakly on the form of the profile.