Order and defectivity nanometrology by image processing and analysis of sub-20 nm BCPs features for lithographic applications

摘要

The line patterns obtained by the self-assembly of the block copolymer (BCP) polystyrene-b-polyethylene oxide (PS-b-PEO) was investigated. The hexagonal PS-b-PEO 42k-11.5k in a thin film was solvent annealed in a chlorophorm saturated atmosphere for three different annealing times. The microphase segregation of this BCP returned 18nm cylinders of PEO through the PS matrix, with an approximately 40 n periodicity, as expected. Under chlorophorm vapours, the PEO cylinders oriented perpendicular to the silicon substrate while increasing the annealing time. These cylinders formed linear patterns with different alignment. To achieve insights about the percentage of alignment, defect type pareto and density, and order quantification to compare the three annealing recipes, the samples were analysed with innovative image analysis software specifically developed in our laboratory to identify elements and defects of line arrays from block copolymer self-assembly. From this technique, it was extracted dimensional metrology estimating pitch size and placement error, and the linewidth of the lines was estimated. Secondly, the methodology allows identification and quantification of typical defects observable in BCP systems, such as turning points, disclination or branching points, break or lone points and end points. The defect density and the quantification of the alignment were estimated using our technique. The methodology presented here represents a step forward in dimensional metrology and defect analysis of BCP DSA systems and can be readily used to analyze other lithographic or non-lithographic patterns.