METHODS FOR UNIFORM IMPRINT PATTERN TRANSFER OF SUB-20 NM FEATURES

摘要

A method of increasing etch selectivity in imprint lithography that enhances the etch process and enhances etch selectivity by employing a material deposition technique that imparts a particular shape to the multilayer stack is described. For example, a 50: 1 etch selectivity between the patterned resist layer and the deposited metal, metalloid or inorganic oxide can be achieved, thereby preserving the pattern feature height significantly prior to the etching process, Pattern transfer of less than 20 nm of fidelity is possible.