Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory National Institute of Standards and Technology (NIST), Gaithersburg,MD 20899;
Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory National Institute of Standards and Technology (NIST), Gaithersburg,MD 20899;
Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory National Institute of Standards and Technology (NIST), Gaithersburg,MD 20899;
Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory National Institute of Standards and Technology (NIST), Gaithersburg,MD 20899;
机译:聚酰亚胺衬里对通过硅通孔(TSV)高纵横比的影响:电学特性和铜突起
机译:一种新型的中介层的制造和电学特性,该中介层具有用于2.5D / 3D应用的具有超低电阻率的直通硅通孔(TSV)的聚合物衬里和硅柱
机译:类金刚石碳衬里在AIGaN / GaN金属氧化物半导体高电子迁移率晶体管中引起的局部应力及其对电特性的影响
机译:隔离衬垫热稳定性对TSV的电气特性的影响
机译:砷化镓晶体生长中缺陷,杂质和载体的特征及其对电性能,热稳定性和注入退火特性的影响。
机译:MWCNT或具有改进的热氧化稳定性的MWCNT或杂化MWCNT /石墨烯纳米片增强的导电和导热低密度聚乙烯基纳米复合材料
机译:氮化硅应力衬垫对AlGaN / GaN Hemts的电气特性产生影响
机译:航天飞机轨道器热保护系统组件的轨道器热压降特性:高密度瓦片,低密度瓦片,致密低密度瓦片和应变隔离垫