Reliability Characteristics of D_2O-Radical Annealed ALD HfO_2 Dielectric

摘要

In this work, metal-oxide-semiconductor (MOS) capacitors incorporating D_2O-radical annealed atomic-layer-deposition (ALD) HfC>2 gate dielectric were fabricated and investigated. The thermo-chemical breakdown model (E model) is used to analyze the TDDB characteristics for lifetime projection. TDDB data shows that Weibull slope (β) is increased with increasingly stress temperature. This may come from the temperature sensitive defects and possible redistribution in dielectric. Meanwhile, the Weibull slope is independent of the stress voltage. Based on the TDDB data, the activation energy (E_a), active dipole-moment (po) electric-field acceleration factor (y) and electric field at 10 years lifetime (E_(10years)) of the D_2O-radical annealed ALD HfO_2 thin films were obtained.