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Transition layers between CVD diamond films and substrates of strong carbide-forming elements: vanadium chromium zirconium and hafnium

机译:CVD金刚石薄膜与强碳化物形成衬底之间的过渡层:钒铬锆和ha

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Abstract: Among the strong carbide forming elements, ten of them have melting points above 1400 degrees Centigrade. The observed transition layers between CVD diamond films and the substrates of Mo, Si, W, Ta, Nb, and Ti have been reported previously. In this paper, further research results on transition layers for the substrate elements of V, Cr, Zr, and Hf are presented. The specimens are prepared in an arc discharge plasma CVD system with the substrate temperature of 900 - 1000 degrees Centigrade and characterized by a high resolution X-ray diffusion diffraction instrument. the experimental results show that the transition layers are polycrystalline VC and V$-2$/C, Cr$-7$/C$-3$/ and HfC for the substrates of V, Cr, and Hf respectively. For the transition layers between CVD diamond films and Zr substrates, the composition of polycrystalline ZrH, ZrC, and their complex compound are verified and the content of hydride is comparable to the content of carbide in this case.!8
机译:摘要:在强碳化物形成元素中,有十个的熔点高于1400摄氏度。先前已经报道了在CVD金刚石膜与Mo,Si,W,Ta,Nb和Ti的衬底之间观察到的过渡层。在本文中,提出了有关V,Cr,Zr和Hf衬底元素的过渡层的进一步研究结果。样品在电弧放电等离子体CVD系统中制备,基板温度为900-1000摄氏度,并通过高分辨率X射线扩散衍射仪进行表征。实验结果表明,对于V,Cr和Hf衬底,过渡层分别是多晶VC和V $ -2 $ / C,Cr $ -7 $ / C $ -3 $ /和HfC。对于CVD金刚石薄膜和Zr衬底之间的过渡层,验证了多晶ZrH,ZrC及其复合化合物的组成,在这种情况下,氢化物的含量可与碳化物的含量相提并论。8

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