首页> 外文会议>Device Research Conference (DRC), 2012 70th Annual >Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers
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Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers

机译:双自对准间隔物对石墨烯纳米带晶体管的横向场带隙调制

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摘要

Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.
机译:独立驱动的三栅石墨烯纳米带晶体管通过CMOS兼容的双自对准间隔光刻技术实现,可有效抑制线边缘的粗糙度和宽度变化。一致的电特性显示石墨烯薄膜中具有横向电场的带隙调制和具有垂直电场的双极性传导。

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