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Investigation of scattering mechanisms in HfO2 gated Hall structures with In0.77Ga0.23As quantum well channel

机译：In 0.77 Ga 0.23 作为量子阱通道的HfO 2 门控霍尔结构的散射机理研究

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In this work we investigate the major scattering mechanisms leading to degradation of mobility in HfO₂-gated, modulation doped, strained In_0.53Ga_0.47As/In_0.77Ga_0.23As QW structures were grown by molecular beam epitaxy on semi-insulating InP substrates. By varying In_0.53Ga_0.47As/InAlAs barrier and HfO₂ thickness along with controlling interface state density and using temperature dependent Hall mobility measurements we have de-convoluted the contribution of various scattering mechanisms to channel mobility degradation.

机译：在这项工作中，我们研究了导致HfO _{2 门控，调制掺杂，应变In _{0.53 Ga _{0.47 As迁移率降低的主要散射机制通过分子束外延在半绝缘的InP衬底上生长/In_0.77Ga_0.23As QW结构。通过改变In _{0.53 Ga _{0.47 As / InAlAs势垒和HfO _{2 的厚度以及控制界面态密度并使用温度相关的霍尔迁移率测量，我们得到了消除了各种散射机制对信道迁移率降低的影响。}}}}}}

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《Device Research Conference: Conference Digest》|2009年|119-120|共2页
会议地点 University Park PA(US);University Park PA(US)
作者
Oktyabrsky S.; Nagaiah P.; Tokranov V.; Kambhampati R.; Yakimov M.; Tsai W.; Koveshnikov S.;
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Univ. at Albany - SUNY, Albany, NY, USA;

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Hall mobility; III-V semiconductors; aluminium compounds; dielectric materials; gallium arsenide; hafnium compounds; indium compounds; interface states; molecular beam epitaxial growth; semiconductor quantum wells; semiconductor-insulator boundaries; HfOsub2/sub-Insub0.53/subGasub0.47/subAs-Insub0.77/subGasub0.23/subAs-InP; Insub0.53/subGasub0.47/subAs-InAlAs-HfOsub2/sub; channel mobility degradation; high-k oxide gated Hall structures; high-k oxide-gated quantum well structure;

机译：霍尔迁移率; III-V族半导体;铝化合物;介电材料;砷化镓;;化合物;铟化合物;界面态;分子束外延生长;半导体量子阱;半导体-绝缘体边界; HfO _{2 - In _{0.53 Ga _{0.47 As-In _{0.77 Ga _{0.23 As-InP; In _{0.53 Ga _{0.47 As-InAlAs-HfO _{2 ；沟道迁移率降低；高k氧化物门控霍尔结构；高k氧化物门控量子阱结构；;}}}}}}}}

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Investigation of scattering mechanisms in HfO2 gated Hall structures with In0.77Ga0.23As quantum well channel

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