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Platform for Collaborative DFM

机译:协作DFM平台

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摘要

A Process/Device/Design framework called the Parametric Yield Simulator is proposed for predicting circuit variability based on circuit design and a set of characterized sources of variation. In this simulator, the aerial image of a layout is simulated across a predefined process window and resulting non-idealities in geometrical features are communicated through to circuit simulators, where circuit robustness and yield can be evaluate in terms of leakage and delay variability. The purpose of this simulator is to identify problem areas in a layout and quantify them in terms of delay and leakage in a manner in which designers and process engineers can collaborate together on an optimal solution to the problem. The Parametric Yield Simulator will serve as a launch pad for collaborative efforts between groups in different disciplines that are looking at variability and yield. Universities such as Berkeley offer a great advantage in exploring innovative approaches as different centers of key expertise exist under one roof. For example a complementary set of characterization and validation experiments has also been designed and in a collaborative study is being executed at Cypress semiconductor on a 65nm NMOS process flow. This unique opportunity of having access to a cutting edge process flow with relatively high transparency has led to a new set of experiments with contributions from six different students in circuit design, process engineering, and device physics. Collaborative efforts with the device group have also led to a new electrical linewidth metrology methodology using enhanced transistors that could prove useful for process characterization.
机译:提出了一种基于参数设计仿真的过程/设备/设计框架,用于基于电路设计和一组特征变化源来预测电路变化。在该模拟器中,布局的航拍图像将在预定义的过程窗口中进行模拟,并将由此产生的几何特征中的不理想情况传达给电路模拟器,在电路模拟器中,可以根据泄漏和延迟可变性来评估电路的鲁棒性和良率。该模拟器的目的是识别布局中的问题区域,并根据延迟和泄漏对它们进行量化,以使设计人员和过程工程师可以共同协作,共同解决问题的最佳方案。参数良率模拟器将作为研究可变性和良率的不同学科的小组之间协作工作的启动平台。像伯克利这样的大学在探索创新方法方面具有很大的优势,因为不同的关键专业知识中心都在一个屋檐下。例如,还设计了一组互补的表征和验证实验,并且正在以65nm NMOS工艺流程在赛普拉斯半导体上进行协作研究。获得具有相对较高的透明度的尖端工艺流程的独特机会导致了一组新的实验,由来自电路设计,工艺工程和器件物理领域的六位不同学生的贡献。与器件组的共同努力还导致了一种使用增强型晶体管的新的电子线宽计量方法学,该方法学可能对工艺表征很有用。

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