首页> 外文会议>Design and Diagnostics of Electronic Circuits amp; Systems, 2009. DDECS '09 >Physical design oriented DRAM Neighborhood Pattern Sensitive Fault testing
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Physical design oriented DRAM Neighborhood Pattern Sensitive Fault testing

机译:面向物理设计的DRAM邻域模式敏感故障测试

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Although the Neighborhood Pattern Sensitive Fault (NPSF) model is recognized as a high quality fault model for memory arrays, the excessive test application time cost associated with it, compared to other fault models, restricts its wide adoption for memory testing. In this work we exploit the physical design (layout) of folded DRAM memory arrays to introduce a new neighborhood type for NPSF testing and a pertinent test and locate algorithm. This algorithm reduces drastically the test application time (about 58% with respect to the well known Type-1 neighborhood) aiming to make the NPSF model also a cost attractive choice. In addition, we introduce the Neighborhood Word-Line Sensitive Fault model and the corresponding test algorithm to cover those faults along with NPSFs, achieving test application time cost reduction from 33% to 41%, depending on various assumptions, with respect to the Type-1 neighborhood.
机译:尽管邻居模式敏感故障(NPSF)模型被认为是内存阵列的高质量故障模型,但是与其他故障模型相比,与之相关的过多测试应用程序时间成本限制了其广泛用于内存测试。在这项工作中,我们利用折叠式DRAM存储器阵列的物理设计(布局)为NPSF测试引入了一种新的邻域类型以及相关的测试和定位算法。该算法极大地减少了测试应用时间(相对于众所周知的Type-1邻域约58%),旨在使NPSF模型也成为一种具有成本吸引力的选择。此外,我们引入了邻域字线敏感故障模型和相应的测试算法来覆盖这些故障以及NPSF,从而根据各种假设将测试应用程序的时间成本从33%降低到41%(相对于Type- 1个社区。

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