Inst. of Microelectron. Optoelectron., Warsaw Univ. of Technol., Warsaw;
CMOS integrated circuits; Global Positioning System; low noise amplifiers; low-power electronics; network topology; radio receivers; CMOS low noise amplifier topology; GPS receiver; Galileo receiver; current 2.492 mA; current 3.093 mA; gain 16.42 dB; gain 17.27 dB; inductively degenerated cascode; inductively degenerated folded cascode; multistandard GNSS; noise figure 1.881 dB; noise figure 1.914 dB; size 90 nm; third order input interception point; ultra low supply voltage LNA implementation; voltage 0.6 V;
机译:用于90nm RF CMOS中具有4-KV HBM ESD保护的直接转换应用的高增益,低电源电压LNA
机译:在90 nm互补金属氧化物半导体(CMOS)工艺中设计和实现5-6 GHz的1-V变压器磁反馈低噪声放大器(LNA)
机译:在5.5 GHz 90 nm RF CMOS LNA中实现即插即用ESD保护-概念,约束和解决方案
机译:用于多校标GNSS的90nm CMOS技术中的低压LNA实现
机译:采用90nm数字CMOS技术的低压低功耗10位管线ADC。
机译:用于汽车压力和温度复合传感器的信号调理IC中采用180 Nm CMOS技术的低功耗小面积符合AEC-Q100标准的SENT发送器的设计
机译:在90nm CMOS中实现低压子带隙电压参考