Prospects of an application of a scanning tunnelling microscope to electron beam induced current (EBIC) investigations

摘要

To evaluate a possible application of a scanning tunneling microscope (STM) to electron beam induced current (EBIC) measurements in device investigations two-dimensional numerical simulations of induced currents in a GaAs-MESFET are performed. A device simulator is modified to consider the influence of the tunneling tip with an applied voltage to the electrical properties within the device. This includes the generation of electron-hole-pairs by the impinging electrons as well as the potential drop at the device surface region caused by the additional tip electrode. To validate the simulation results measurements of induced currents are carried out and compared with the simulations.