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Electrical characterization of ZnO ceramics by scanning tunneling spectroscopy and beam-induced current in the scanning tunneling microscope

机译:扫描隧道光谱法和扫描隧道显微镜中的束流感应电流表征ZnO陶瓷的电特性

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摘要

A correlative study of the electrically active grain boundary structure of ZnO polycrystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. Current imaging tunneling spectroscopy (CITS) measurements reveal reduced surface band gaps, as compared with grain interiors, at the charged boundaries imaged by SEM-based remote electron beam induced current (REBIC). ZnO grain boundaries were also imaged in the STM-REBIC mode with a resolution of up to 20 nm. The contrast differences observed in the SEM-REBIC and STM-REBIC images are discussed in terms of the different experimental conditions used in both techniques.
机译:使用扫描电子显微镜/扫描隧道显微镜(SEM / STM)组合仪器对ZnO多晶的电活性晶界结构进行了相关研究。当前的成像隧道光谱法(CITS)测量表明,与基于SEM的远程电子束感应电流(REBIC)成像的带电边界相比,与谷物内部相比,表面带隙减小了。 ZnO晶界也以STM-REBIC模式成像,分辨率高达20 nm。根据两种技术中使用的不同实验条件,讨论了在SEM-REBIC和STM-REBIC图像中观察到的对比度差异。

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