Influence of defects on diffusion length inhomogeneity in GaAs:Te wafers

摘要

Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface Photo Voltage) and EB1C (Electron Beam Induced Current) methods. The resulting radial distribution of the minority carrier diffusion length L across each wafer has been correlated with the profiles obtained for dislocation density and N_D-N_A. By comparing the present results with previous cathodoluminescence analyses (Mendez et al. 1988, Mendez et al. 1991), it is suggested that dislocations and dislocation related centres determine the L values.