Recent improvements in NFO for semiconductor defect or device imaging

摘要

For some years increasing interest has been given to optical near field probe technologies. New sensors have been developped or improved which are able to collect or deliver photons with nanometric accuracy. This contributes to enlarging the field of the scanning probe microscopy techniques which are already well accepted in nanotechnology. Coupled investigations with optical means ans atomic force microscopy or shear force microscopy have been performed which lead to more consistent information. This also makes it possible either to computer assemble optical images or to make localized photo-excitation for the purpose of nano-lithography, quantum dot studies, optical connection or molecular luminescence, this list not being exhaustive. The aim of this communication is to review the present achievable means and the corresponding investigated applications especially devoted to the field of Integrated Circuits and opto-electronic device technology.