Infrared Microscopic Photoluminescence Mapping on Semiconductors at Low Temperatures

摘要

Highly spatially resolved mapping of photoluminescence (PL) in the infrared region at low temperatures has been carried out for the analysis of deep-levels in semiconductors. A unique scanning-laser-beam type of apparatus was developed with an excitation beam of 10 μm diam, a scanning area of 1 mm × 1 mm, a wavelength region between 600 and 1800 nm, and a temperature range between 15 and 300 K. The microscopic mapping of deep-level PL from an annealed Czochralski-grown Si crystal with slip dislocations was analyzed for the first time. An opposite intensity contrast between the 0.77 eV band (D_b band) and dislocation-related D-lines gives strong evidence for the idea that the D_b band is due not to dislocations but to oxygen precipitates.