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Applications of Atomic Force Microscopy for Silicon Wafer Characterization

机译:原子力显微镜在硅晶圆表征中的应用

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摘要

AFM (Atomic Force Microscopy) is a highly sensitive tool for the analysis of the microroughness of Si wafers and for the investigation of crystal defects. AFM images of atomic steps were used for verification of the vertical AFM calibration on slightly misoriented Si(111) wafers after chemical etching and epitaxial deposition. The roughness analysis of etched, polished and epitaxial Si(100) wafers shows a reduction of the surface roughness by chemomechani-cal polishing by more than two orders of magnitude compared to an etched surface. The morphology of crystal originated particles on Si(100) appears as smooth surface depression after polishing and sharply defined pit after SC1 treatment.
机译:AFM(原子力显微镜)是一种高度灵敏的工具,可用于分析Si晶片的微粗糙度和研究晶体缺陷。原子台阶的原子力显微镜图像用于化学刻蚀和外延沉积后,在取向稍差的Si(111)晶片上验证垂直原子力显微镜校准。蚀刻,抛光和外延Si(100)晶片的粗糙度分析表明,与蚀刻表面相比,通过化学机械抛光可将表面粗糙度降低两个数量级以上。 Si(100)上源自晶体的粒子的形态表现为抛光后的光滑表面凹陷和SC1处理后的尖锐凹坑。

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