Improved thermally stimulated current analysis in semi-insulating GaAs: new conclusions

摘要

Measurements of EL2° and EL2~+ concentrations by IR absorption and temperature-dependent photocurrent (1.13 eV) and dark current at 80K < T < 300K in semi-insulating GaAs, allow a more accurate analysis of the thermally stimulated current spectrum. We conclude that trap T_2, at 220K, is related to As_(Ga) and controlled by both EL2° and EL2~+, and T_3, at 200K is most likely a V_(As)-related defect complex..