Defect-Induced Oxidation of TiN in Ion-Beam-Assisted Deposition

摘要

We focus on oxygen contamination of TiN during ion-assisted deposition, where enough oxygen is well introduced such that defects show up at the surface under competition between thin film growth and ion assisted etching. The analysis for the phenomena gives not only a standard of TiN oxidation in ion process, but also a chance of development of the defect-induced oxidation process.