ORGANOMETALLIC COMPOUNDS FOR THE DEPOSITION OF HIGH PURITY TIN OXIDE AND DRY ETCHING OF THE TIN OXIDE FILMS AND DEPOSITION REACTORS

摘要

Specific organometallic compounds of Formula I: Qx-Sn-(A1R1'z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.