Dislocation Lines and Walls in Vapor Phase Grown ZnSe Crystals Studied by Light Scattering Tomography

摘要

ZnSe crystals are very promising host materials of blue laser diodes (LD). Here, dislocations are studied by light scattering tomography (LST). Dislocation walls where dislocation lines were randomly piled in thin and flat regions of about 10 μm thick on some {111} and {110} planes in the crystals were found by LST.