An investigation of the limit of detection and the scattering dependence of the optical precipitate profiler (OPP)

摘要

The Optical Precipitate Profiler (OPP) and similar instruments are establishing themselves as routine techniques for measuring bulk micro-defect density (BMD) and denuded zone depths in semiconductor wafers. This task has traditionally been done by means of the cleave-and-etch technique in which defects are counted on a cleaved edge of an etched wafer using an optical microscope. The OPP makes this task faster, simpler and more accurate. In addition it can perform the measurement on a whole wafer.