Electrical characterization of 1 keV He-, Ne-, and Ar-ion bombarded n-Si using deep level transient spectroscopy

摘要

We report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (D1) with electronic levels at approx 0.20eV below the condution band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) iwth levels close to the middle of the band gap. Both sets of defects were thermally stable up to approx 400 deg, and their annealing was accompaniced by the introduction of a family of secondary defects (D3). The "D3" defects had levels at approx 0.21 eV below the conduction band and were thermally stable at 650 deg. We have proposed that the "D1", "D2", and "D3" defects are higher-order vacancy clusters (larger than the divacancy) or complexes thereof.