R-OSF are known to appear in CZ silicon crystals, but their nuclei are not observable in the asgrown state, and as-such have been difficult to characterize. Using a crystal grown with modifications inits pulling rate, this paper used lifetime in particular, coupled with the OPP, to investigate as-grown OSF nuclei size and density distribution and to discuss further how R-OSF are formed and how their formation interacts with that of other defects. It was found that faster cooling in the temperature range where large voids are formed and how their formation interacts with that of other defects. It was found that faster cooling in the temperature range where large voids are formed (1070 deg-970 deg), which resulted in a larger residual vacancy concentration, caused the OSF ring to become wider, and teh OSF-nuclei to become larger than normal in this area, while fast cooling in the temperature range where OSF are formed (990 deg-900 deg) is thought to suppress their formation, which thus resulted in smaller OSF-nuclei.
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