首页> 外文会议>Data Engineering, 2005. ICDE 2005. >Analog circuit cell model based on single C60 molecular transistor
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Analog circuit cell model based on single C60 molecular transistor

机译:基于单个C 60 分子晶体管的模拟电路单元模型

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摘要

In this paper, in the enlightenment of nanomechanical oscillations' experiment in single-C60 transistor, utilizing improved shuttle mechanism for charge transfer in Coulomb blockade nanostructures, we give a new model of transistor based OD C60 by combining the resistance with the spring, and simulate the I-Vds, where we find the Coulomb blockade and Coulomb staircase, and I-Vg characteristics, where we find periodical attenuation phenomenon. And on the basis of this transistor mechanism model, we construct a new model of an amplifier with the resistant load, and give the new small-signal equivalent circuit model. Here we solve master equation with the three-state model because of its simplicity and higher precision.
机译:本文在对单C 60 晶体管的纳米机械振荡实验的启示下,利用改进的穿梭机理在库仑阻塞纳米结构中进行电荷转移,给出了基于晶体管的新模型OD C 60 通过结合阻力和弹簧,并模拟IV ds ,在其中我们发现库仑阻塞和库仑阶梯,以及IV g 特性,其中我们发现周期性衰减现象。并在此晶体管机制模型的基础上,构建了具有抗性负载的放大器的新模型,并给出了新的小信号等效电路模型。在这里,由于三态模型的简单性和较高的精度,我们用它来求解主方程。

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