Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide

机译：基于外延砷化镓的探测器结构的电流电压特性

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Results of investigation of temperature dependence of current-voltage characteristics (VAC) of detector structures based on epitaxial layers GaAs:Cr is reported. It was determined that forward branches of VAC determined by unipolar injection which changed

机译：报道了基于外延层GaAs：Cr的探测器结构的电流-电压特性（VAC）与温度的关系的研究结果。可以确定VAC的前向分支是由单极注入决定的，该分支改变了

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《Control and Communications, 2007 Siberian Conference on》|2007年|P.207-210|共4页
会议地点 TomskRussia
作者
Kalygina; V.M.; Ponomarev; I.V.; Slunko; E.S.;
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III-V semiconductors; chromium; deep levels; gallium arsenide; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; GaAs:Cr; current-voltage characteristics; deep levels; detector structures; epitaxial gallium arsenide; p; -i-n; st;

机译：III-V半导体；铬;深层次砷化镓p-i-n光电二极管光电探测器半导体外延层；砷化镓：铬;电流电压特性；深层次探测器结构；外延砷化镓；销;圣;

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1. X-ray detectors based on epitaxial gallium arsenide [J] . Ayzenshtat GI, Vilisova MD, Drugova EP, Technical physics . 2006,第8期

机译：基于外延砷化镓的X射线探测器
2. Peculiarities of Stable Oscillations of High Amplitude Current Occuring in Long High-Impedance Planar-Epitaxial Gallium-Arsenide-Based Structures [J] . A. I. Mikhailov, A. V. Mitin, I. O. Kozhevnikov Radioelectronics and Communications Systems . 2015,第4期

机译：长高阻抗平面外延砷化镓基结构中发生高振幅电流的稳定振荡的特殊性
3. P-i-n structures based on high-ohmic gettered gallium arsenide for alpha particle detectors [J] . Gorelenok AT, Tomasov AA, Shmidt NM, Technical physics letters: Letters to the Russian journal of applied physics . 2006,第11期

机译：基于高阻吸气砷化镓的P-i-n结构用于α粒子探测器
4. Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide [C] . V. M. Kalygina, I. V. Ponomarev, E. S. Slunko Siberian Conference on Control and Communications . 2007

机译：基于外延砷化镓的检测器结构的电流 - 电压特性
5. Current-voltage and capacitance-voltage behaviour of chromium-gold/high-resistivity (aluminum(x)gallium(1-x))(y)indium(1-y)phosphorus/n-gallium arsenide structures [D] . Pandharpurkar, Hemant M. 1991

机译：铬金/高电阻率（铝（x）镓（1-x））（y）铟（1-y）磷/正砷化镓结构的电流电压和电容电压行为
6. RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System [O] . Farahiyah Mustafa, Abdul Manaf Hashim 2014

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7. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector. [O] . Alexiev, D, Butcher, KSA 1991

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8. Development of Gallium Arsenide-Phosphide Graded Band-GAP Base Transistor Structures [R] . 1965

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Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide

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