METHOD FOR OBTAINING EPITAXIAL GALLIUM ARSENIDE STRUCTURES FOR PHOTOVOLTAIC DETECTORS OF X-RAY RADIATION RANGE

摘要

A method for obtaining gallium arsenide structure for photovoltaic detectors of X-ray radiation, wherein epitaxial growing is carried out on a n-type heavily-doped substrate of a low n-GaAs buffer layer having 2-5 m thickness, an active upper p-GaAs layer having 1-2 m thickness. Epitaxial growth process is carried out by forced cooling from limited volume of saturated gallium arsenide solution doped with amphoteric impurity of silicon in bismuth melt. The thickness of active n-GaAs layer is 120 m, concentration of charge carriers is 10 cm.