首页> 外文会议>Conference on Smart Electronics, MEMS, BioMEMS, and Nanotechnology; 20040315-20040318; San Diego,CA; US >High aspect ratio neural probes for monolithic integration with ultra- low power CMOS operational amplifier circuit
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High aspect ratio neural probes for monolithic integration with ultra- low power CMOS operational amplifier circuit

机译:高纵横比神经探针,用于与超低功耗CMOS运算放大器电路的单片集成

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摘要

A microprobe array for recording neural signals has been designed and fabricated for future monolithic integration with an ultra-low power CMOS operational amplifier circuit on a 2 mm x 2 mm chip. A LIGA-like process is employed utilizing UV lithography and electrodeposition techniques. Probes are fabricated on silicon substrate. The fabrication process is compatible with monolithic integration with CMOS signal processing circuitry. The probes are 210 μm high and have an aspect ratio 3:1. Comments are made on processing issues related to chip-level monolithic integration.
机译:已经设计和制造了用于记录神经信号的微探针阵列,以便将来与2mm x 2mm芯片上的超低功耗CMOS运算放大器电路进行单片集成。利用UV光刻和电沉积技术采用类LIGA工艺。探针在硅基板上制造。该制造工艺与具有CMOS信号处理电路的单片集成兼容。探针的高度为210μm,纵横比为3:1。对与芯片级单片集成有关的处理问题进行了评论。

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