Improved Breakdown Voltage and Output Conductance Characteristics of GaAs pHEMTs using Composite Gate fabricated by Digital Recess Method

摘要

In this paper, we report a new technique to enhance breakdown voltages and output conductances of AlGaAs/InGaAs/GaAs pHEMTs. This structure used field plate (FP) in the form of composite gate. Composite gate was fabricated using digital recess method. A breakdown voltage of a single gate device was 6.4V and output conductances were 17mS/mm. The proposed structure with composite gate achieved 9.8 V breakdown voltage and 5.5 mS/mm output conductances.