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Dynamic MEMS devices for multi-axial fatigue and elastic modulus measurement

机译:用于多轴疲劳和弹性模量测量的动态MEMS器件

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摘要

For reliable MEMS device fabrication and operation, there is a continued demand for precise characterization of materials at the micron scale. This paper presents a novel material characterization device for fatigue lifetime testing. The fatigue specimen is subjected to multi-axial loading, which is typical of most MEMS devices. Polycrystalline silicon (polysilicon) fatigue devices were fabricated using the MUMPS process with a three-layer mask process ― ground plane, anchor, and structural layer of polysilicon. A fatigue device consists of two or three beams, attached to a rotating ring and anchored to the substrate on each end. In order to generate a sufficiently large stress, the fatigue devices were tested in resonance to produce a von Mises equivalent stress as high as 1 GPa, which is in the fracture strength range reported for polysilicon. A further increase of the stress in the beam specimens was obtained by introducing a notch with a focused ion beam. The notch resulted into a stress concentration factor of about 3.8, thereby producing maximum von Mises equivalent stress in the range of 1―4 GPa. This study provides insight into multi-axial fatigue testing under typical MEMS conditions and additional information about micron-scale polysilicon mechanical behavior, which is the current basic building material for MEMS devices.
机译:为了可靠的MEMS器件制造和操作,持续需要微米级的材料精确表征。本文提出了一种用于疲劳寿命测试的新型材料表征装置。疲劳样品会经受多轴载荷,这是大多数MEMS器件的典型特征。使用MUMPS工艺和三层掩膜工艺-多晶硅的接地层,锚固件和结构层来制造多晶硅(polysilicon)疲劳器件。疲劳装置由两根或三根梁组成,它们固定在旋转环上,并在每一端固定在基底上。为了产生足够大的应力,对疲劳装置进行了共振测试,以产生高达1 GPa的冯·米塞斯等效应力,该应力在多晶硅报道的断裂强度范围内。通过引入带有聚焦离子束的切口,可以进一步增加束样本中的应力。缺口导致应力集中系数约为3.8,从而产生最大von Mises等效应力,范围为1-4 GPa。这项研究提供了在典型MEMS条件下进行多轴疲劳测试的见识,以及有关微米级多晶硅机械行为的附加信息,后者是MEMS设备的当前基础建筑材料。

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